ZXMN2A02X8TC - Даташиты. Аналоги. Основные параметры
Наименование производителя: ZXMN2A02X8TC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 356 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: MSOP8
Аналог (замена) для ZXMN2A02X8TC
ZXMN2A02X8TC Datasheet (PDF)
zxmn2a02x8tc.pdf

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance
zxmn2a02x8ta.pdf

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance
zxmn2a02x8.pdf

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance
zxmn2a02n8.pdf

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
Другие MOSFET... ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , ZXMN2A01FTA , ZXMN2A01FTC , ZXMN2A02N8TA , ZXMN2A02X8TA , IRFP450 , ZXMN2A03E6TA , ZXMN2A03E6TC , ZXMN2A14FTA , ZXMN2B01FTA , ZXMN2B03E6TA , ZXMN2B14FHTA , ZXMN2F30FHTA , ZXMN2F34FHTA .
History: TPB65R135MFD | SI7615ADN | CTD04N7P5 | NDP710A | SFF440J | TPD60R330M | TPG65R360M
History: TPB65R135MFD | SI7615ADN | CTD04N7P5 | NDP710A | SFF440J | TPD60R330M | TPG65R360M



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