ZXMN3A02X8TC
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMN3A02X8TC
Маркировка: ZXMN3A02
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.3
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 5.5
ns
Cossⓘ - Выходная емкость: 209
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025
Ohm
Тип корпуса:
MSOP8
Аналог (замена) для ZXMN3A02X8TC
ZXMN3A02X8TC
Datasheet (PDF)
..1. Size:453K zetex
zxmn3a02x8tc.pdf ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
3.1. Size:453K zetex
zxmn3a02x8ta.pdf ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
4.1. Size:454K diodes
zxmn3a02x8.pdf ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
6.1. Size:180K diodes
zxmn3a02n8.pdf ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
6.2. Size:179K zetex
zxmn3a02n8ta.pdf ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
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