Справочник MOSFET. ZXMN3A03E6TC

 

ZXMN3A03E6TC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A03E6TC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.4 ns
   Cossⓘ - Выходная емкость: 104 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: SOT-23-6
     - подбор MOSFET транзистора по параметрам

 

ZXMN3A03E6TC Datasheet (PDF)

 ..1. Size:189K  zetex
 zxmn3a03e6tc.pdf pdf_icon

ZXMN3A03E6TC

ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 3.1. Size:189K  zetex
 zxmn3a03e6ta.pdf pdf_icon

ZXMN3A03E6TC

ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 4.1. Size:191K  diodes
 zxmn3a03e6.pdf pdf_icon

ZXMN3A03E6TC

ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 7.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A03E6TC

ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

ПОКАЗАТЬ ЕЩЁ

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History: NCEP055N10 | STB18NF25 | BUZ54A | NTMD6P02R2 | DH170P04V | AP2530AGY-HF | JCS7N65CE

 

 
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