Справочник MOSFET. ZXMN3A04KTC

 

ZXMN3A04KTC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A04KTC
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 10.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.1 ns
   Cossⓘ - Выходная емкость: 349 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: DPAK
 

 Аналог (замена) для ZXMN3A04KTC

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN3A04KTC Datasheet (PDF)

 ..1. Size:148K  zetex
 zxmn3a04ktc.pdf pdf_icon

ZXMN3A04KTC

ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista

 5.1. Size:150K  diodes
 zxmn3a04k.pdf pdf_icon

ZXMN3A04KTC

ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista

 6.1. Size:188K  diodes
 zxmn3a04dn8.pdf pdf_icon

ZXMN3A04KTC

ZXMN3A04DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resistan

 7.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A04KTC

ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXMN3A01FTA , ZXMN3A01FTC , ZXMN3A01Z , ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , ZXMN3A03E6TA , ZXMN3A03E6TC , IRF2807 , ZXMN3A14FTA , ZXMN3B01FTA , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA , ZXMN4A06GQ , ZXMN4A06GTA .

History: 2SK3510-ZJ | SQJ910AEP | BLM08P02-R

 

 
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