IRFR4105 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFR4105
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 49 ns
Cossⓘ - Выходная емкость: 240 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR4105
IRFR4105 Datasheet (PDF)
irfr4105.pdf

PD - 91302CIRFR/U4105HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR4105)VDSS = 55V Straight Lead (IRFU4105) Fast SwitchingRDS(on) = 0.045 Fully Avalanche RatedGDescriptionID = 27A SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This
irfr4105pbf irfu4105pbf.pdf

PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r
irfr4105.pdf

isc N-Channel MOSFET Transistor IRFR4105, IIRFR4105FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
irfr4105zpbf irfu4105zpbf.pdf

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re
Другие MOSFET... IRFR230A , IRFR310 , IRFR310A , IRFR320 , IRFR320A , IRFR3303 , IRFR3910 , IRFR410 , 8205A , IRFR411 , IRFR420 , IRFR420A , IRFR5305 , IRFR5410 , IRFR5505 , IRFR6215 , IRFR9010 .
History: IPP075N15N3G | R6530KNX1 | SSRF30N20-400 | MTD6P10E | IPP100N10S3-05 | TK70X06K3 | IRF7404TR
History: IPP075N15N3G | R6530KNX1 | SSRF30N20-400 | MTD6P10E | IPP100N10S3-05 | TK70X06K3 | IRF7404TR



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