ZXMN4A06GTA Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMN4A06GTA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.45 ns
Cossⓘ - Выходная емкость: 92 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMN4A06GTA
ZXMN4A06GTA Datasheet (PDF)
zxmn4a06gta.pdf

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F
zxmn4a06gt.pdf

ZXMN4A06GTwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET
zxmn4a06g.pdf

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F
zxmn4a06gq.pdf

ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET
Другие MOSFET... ZXMN3A04KTC , ZXMN3A14FTA , ZXMN3B01FTA , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA , ZXMN4A06GQ , IRFZ48N , ZXMN4A06KTC , ZXMN6A07FTA , ZXMN6A07FTC , ZXMN6A07ZTA , ZXMN6A08E6Q , ZXMN6A08E6TA , ZXMN6A08E6TC , ZXMN6A08GTA .
History: AOT66620L
History: AOT66620L



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b