ZXMN6A11GTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMN6A11GTA
Маркировка: ZXMN6A11
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 3.1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8 nC
Время нарастания (tr): 3.5 ns
Выходная емкость (Cd): 35.2 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMN6A11GTA
ZXMN6A11GTA Datasheet (PDF)
zxmn6a11gtc zxmn6a11g zxmn6a11gta.pdf
A Product Line ofDiodes IncorporatedZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low gate drive V(BR)DSS RDS(on) TA = 25C Low input capacitance Green component and RoHS compliant (Note 1) 120m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 180m
zxmn6a11g.pdf
A Product Line of Diodes Incorporated GreenZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6
zxmn6a11dn8.pdf
ZXMN6A11DN860V SO8 Dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.2600.180 @ VGS= 4.5V 2.6DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD1 D2 Low on-
zxmn6a11zta.pdf
A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green
zxmn6a11z.pdf
ZXMN6A11Z60V SOT89 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.6600.180 @ VGS= 4.5V 2.9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc
zxmn6a11z.pdf
ZXMN6A11Zwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE60ND03N
