ZXMP2120G4TA - описание и поиск аналогов

 

ZXMP2120G4TA. Аналоги и основные параметры

Наименование производителя: ZXMP2120G4TA

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 25 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 25 Ohm

Тип корпуса: SOT-223

Аналог (замена) для ZXMP2120G4TA

- подборⓘ MOSFET транзистора по параметрам

 

ZXMP2120G4TA даташит

 ..1. Size:415K  zetex
 zxmp2120g4ta.pdf pdf_icon

ZXMP2120G4TA

ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ

 4.1. Size:416K  diodes
 zxmp2120g4.pdf pdf_icon

ZXMP2120G4TA

ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ

 6.1. Size:386K  diodes
 zxmp2120e5.pdf pdf_icon

ZXMP2120G4TA

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device inclu

 6.2. Size:417K  diodes
 zxmp2120ff.pdf pdf_icon

ZXMP2120G4TA

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from

ПОКАЗАТЬ ЕЩЁ

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History: 2SK2122 | XP152A11E5MR | 2SK3572-Z | SM6129NSU | SM7003NSF | MTP15N05L | FTA04N65

 

 

 

 

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