Справочник MOSFET. ZXMP6A17KTC

 

ZXMP6A17KTC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMP6A17KTC
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 9.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.4 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: TO-252-3L
     - подбор MOSFET транзистора по параметрам

 

ZXMP6A17KTC Datasheet (PDF)

 ..1. Size:681K  diodes
zxmp6a17ktc.pdfpdf_icon

ZXMP6A17KTC

A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A

 5.1. Size:684K  diodes
zxmp6a17k.pdfpdf_icon

ZXMP6A17KTC

A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A

 6.1. Size:665K  diodes
zxmp6a17e6 zxmp6a17e6ta.pdfpdf_icon

ZXMP6A17KTC

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

 6.2. Size:170K  diodes
zxmp6a17dn8.pdfpdf_icon

ZXMP6A17KTC

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ISP80N08S2L | SMK0870F | NDT6N70 | IXTP2R4N120P | FK16UM-5 | IPD50R280CE | 2SK1940

 

 
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