Справочник MOSFET. ZXMP7A17GTA

 

ZXMP7A17GTA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMP7A17GTA
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.4 ns
   Cossⓘ - Выходная емкость: 52 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: SOT-223
     - подбор MOSFET транзистора по параметрам

 

ZXMP7A17GTA Datasheet (PDF)

 ..1. Size:426K  zetex
 zxmp7a17gta.pdf pdf_icon

ZXMP7A17GTA

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

 5.1. Size:428K  diodes
 zxmp7a17g.pdf pdf_icon

ZXMP7A17GTA

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

 5.2. Size:662K  diodes
 zxmp7a17gq.pdf pdf_icon

ZXMP7A17GTA

ZXMP7A17GQ Green70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS RDS(on) TA = +25C Low On-Resistance Fast Switching Speed 160m @ VGS= -10V -2.6A -70V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 250m @ VGS= -4.5V -1.6A Halogen and Antimony Free.

 6.1. Size:532K  diodes
 zxmp7a17k.pdf pdf_icon

ZXMP7A17GTA

ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHFU214 | FDI2532 | 2SK3572-Z | APT10050B2VFRG | CEP20P06 | STFI13N95K3 | BRCS055N08SHBD

 

 
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