ZXMS6004FFQ - описание и поиск аналогов

 

ZXMS6004FFQ. Аналоги и основные параметры

Наименование производителя: ZXMS6004FFQ

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm

Тип корпуса: SOT23

Аналог (замена) для ZXMS6004FFQ

- подборⓘ MOSFET транзистора по параметрам

 

ZXMS6004FFQ даташит

 ..1. Size:454K  diodes
zxms6004ffq.pdfpdf_icon

ZXMS6004FFQ

ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 90mJ Short Circ

 4.1. Size:414K  diodes
zxms6004ff.pdfpdf_icon

ZXMS6004FFQ

A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-v

 4.2. Size:504K  kexin
zxms6004ff.pdfpdf_icon

ZXMS6004FFQ

SMD Type MOSFET Transistors N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Features SOT-23 Unit mm +0.1 2.9-0.1 Compact high power dissipation package +0.1 0.4 -0.1 Low input current 3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 Therm

 6.1. Size:479K  diodes
zxms6004dg.pdfpdf_icon

ZXMS6004FFQ

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

Другие MOSFET... ZXMP6A17N8TC , ZXMP6A18KTC , ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , IRF4905 , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R .

 

 

 

 

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