Справочник MOSFET. ZXMS6006DGQ

 

ZXMS6006DGQ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMS6006DGQ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для ZXMS6006DGQ

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMS6006DGQ Datasheet (PDF)

 ..1. Size:340K  diodes
zxms6006dgq.pdfpdf_icon

ZXMS6006DGQ

GreenZXMS6006DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

 4.1. Size:241K  diodes
zxms6006dg.pdfpdf_icon

ZXMS6006DGQ

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 5.1. Size:276K  diodes
zxms6006dt8q.pdfpdf_icon

ZXMS6006DGQ

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 5.2. Size:267K  diodes
zxms6006dt8.pdfpdf_icon

ZXMS6006DGQ

A Product Line of Diodes IncorporatedZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

Другие MOSFET... ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , 2SK3568 , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX .

History: CEP85N75 | FTK2102

 

 
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