SI1025X - описание и поиск аналогов

Si1025X Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (min) (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition 4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance 4 Low Threshold - 2 V (typ.) Fast Switching Speed 20 ns (ty

Si1024X Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET 1.8 V Rated 0.85 at VGS = 2.5 V Very Small Footprint 20 500 High-Side Switching 1.25 at VGS = 1.8 V 350 Low On-Resistance 0.7 Low

Si1021R Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS(min.) (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance 4 Low Threshold - 2 V (typ.) Fast Switching Speed 20 ns (typ.)

Si1023X Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 1.2 at VGS = - 4.5 V - 350 TrenchFET Power MOSFET 1.8 V Rated Very Small Footprint 1.6 at VGS = - 2.5 V - 300 - 20 High-Side Switching 2.7 at VGS = - 1.8 V - 150 Low On-Resistance 1.2

Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS(min) (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition 1.40 at VGS = 10 V 60 1 to 2.5 500 Low On-Resistance 1.40 Low Threshold 2 V (typ.) Low Input Capacitance 30 pF Fast Switching Speed 15 ns (typ.) Low Input and Output

Si1023CX Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.756 at VGS = - 4.5 V - 0.35 100 % Rg Tested 1.038 at VGS = - 2.5 V - 0.35 - 20 1 nC Typical ESD protection 1000 V (HBM) 1.44 at VGS = - 1.8 V - 0.1 Fast Sw

Si1028X Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) ESD Protected 550 V Typical HBM 0.650 at VGS = 10 V 0.48 Material categorization 30 0.5 For definitions of compliance please see 0.770 at VGS = 4.5 V 0.45 www.vishay.com/doc?99912 BENEFITS Low Offset Voltage

Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (mA) Definition 1.40 at VGS = 10 V 500 TrenchFET Power MOSFETs N-Channel 60 3 at VGS = 4.5 V 200 Very Small Footprint High-Side Switching 4 at VGS = - 10 V - 500 P-Channel - 60 Low On-Re

Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS(min.) (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition 1.25 at VGS = 10 V 60 1 to 2.5 330 TrenchFET Power MOSFETs Low On-Resistance 1.25 Low Threshold 2.5 V Low Input Capacitance 30 pF Fast Switching Speed 25 ns