SI1029X
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI1029X
Маркировка: H
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.305
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 6
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4
Ohm
Тип корпуса:
SC-89
Аналог (замена) для SI1029X
SI1029X
Datasheet (PDF)
..1. Size:130K vishay
si1029x.pdf 
Si1029XVishay SiliconixComplementary N- and P-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition1.40 at VGS = 10 V 500 TrenchFET Power MOSFETsN-Channel 603 at VGS = 4.5 V 200 Very Small Footprint High-Side Switching4 at VGS = - 10 V - 500P-Channel - 60 Low On-Re
9.1. Size:135K vishay
si1024x.pdf 
Si1024XVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated0.85 at VGS = 2.5 V Very Small Footprint20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7 Low
9.2. Size:155K vishay
si1021r.pdf 
Si1021RVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition- 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.)
9.3. Size:110K vishay
si1023x.pdf 
Si1023XVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = - 4.5 V - 350 TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint1.6 at VGS = - 2.5 V - 300- 20 High-Side Switching2.7 at VGS = - 1.8 V - 150 Low On-Resistance: 1.2
9.4. Size:114K vishay
si1026x.pdf 
Si1026XVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.40 at VGS = 10 V 60 1 to 2.5 500 Low On-Resistance: 1.40 Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ.) Low Input and Output
9.5. Size:149K vishay
si1023cx.pdf 
Si1023CXVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.756 at VGS = - 4.5 V - 0.35 100 % Rg Tested1.038 at VGS = - 2.5 V - 0.35- 20 1 nC Typical ESD protection: 1000 V (HBM)1.44 at VGS = - 1.8 V - 0.1 Fast Sw
9.6. Size:148K vishay
si1028x.pdf 
Si1028XVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) ESD Protected: 550 V Typical HBM0.650 at VGS = 10 V 0.48 Material categorization:30 0.5For definitions of compliance please see0.770 at VGS = 4.5 V 0.45www.vishay.com/doc?99912BENEFITS Low Offset Voltage
9.7. Size:113K vishay
si1025x.pdf 
Si1025XVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (ty
9.8. Size:151K vishay
si1022r.pdf 
Si1022RVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.25 at VGS = 10 V 60 1 to 2.5 330 TrenchFET Power MOSFETs Low On-Resistance: 1.25 Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns
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