SI1302DL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI1302DL
Маркировка: KA*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.28 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 0.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 0.86 nC
Время нарастания (tr): 8 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.48 Ohm
Тип корпуса: SC-70
SI1302DL Datasheet (PDF)
si1302dl.pdf
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Si1302DLVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Halogen-free According to IEC 61249-2-21Definition0.480 at VGS = 10 V 0.6430 TrenchFET Power MOSFET0.700 at VGS = 4.5 V 0.53 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1Marking Code KA XX3DLot Traceability and Date Code S 2 Pa
si1303dl.pdf
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Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1
si1300dl.pdf
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Si1300DLNew ProductVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 25020202.5 @ VGS = 2.5 V 150SOT-323SC-70 (3-Leads)Marking CodeG 1KC XX3 DLot Traceabilityand Date CodeS 2Part # CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20
si1303dl.pdf
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Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1
si1307dl.pdf
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Si1307DLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 TrenchFET Power MOSFETs: 1.8 V Rated- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1LC
si1300bdl.pdf
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Si1300BDLVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.85 at VGS = 4.5 V 0.4 TrenchFET Power MOSFET20 0.335 100 % Rg Tested1.08 at VGS = 2.5 V 0.35 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS) DG 1 Marking Code 3 D KE
si1304dl.pdf
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Si1304DLVishay SiliconixN-Channel 25-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.350 @ VGS = 4.5 V0.752525131.30.450 @ VGS = 2.5 V 0.66SOT-323SC-70 (3-LEADS)G 1Marking Code3D KB XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewOrdering Information: Si1304DL-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Pa
si1307edl.pdf
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Si1307EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 ESD Protection: 3000 V- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1Marking Code3
si1303edl.pdf
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Si1303EDLNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.430 @ VGS = 4.5 V"0.7220200.480 @ VGS = 3.6 V "0.680.700 @ VGS = 2.5 V "0.56SOT-323SC-70 (3-LEADS)G 1Marking Code3D LD XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
si1305edl.pdf
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Si1305EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = - 4.5 V 0.92 ESD Protection: 3000 V- 8 0.380 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/EC0.530 at VGS = - 1.8 V 0.67SOT-323SC-70 (3-LEADS)G 1Marking Code3D
si1305dl.pdf
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Si1305DLVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFET: 1.8 V0.280 at VGS = - 4.5 V - 0.92 Compliant to RoHS Directive 2002/95/EC0.380 at VGS = - 2.5 V - 0.79- 80.530 at VGS = - 1.8 V - 0.67SOT-323SC-70 (3-LEADS)G 1Marking Cod
si1304bdl.pdf
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Si1304BDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET30 1.1 100 % Rg Tested0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1DMarking Code3DKF XXL
si1301dl.pdf
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Si1301DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-323SC-70 (3-Leads)Marking CodeG 1LG XXLot Traceability3 Dand Date CodePart # CodeS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sourc
si1308edl.pdf
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New ProductSi1308EDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) 100 % Rg Tested0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization:For definitions of compliance please see0.185 at VGS = 2.5 V 1.3ww
psi130-06.pdf
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ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK
pssi130-06.pdf
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ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK
si1304bdl.pdf
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SI1304BDLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![SI1302DL](https://alltransistors.com/images/us.png)
![SI1302DL](https://alltransistors.com/images/es.png)
![SI1302DL](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C