Справочник MOSFET. SI1304BDL

 

SI1304BDL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SI1304BDL

Маркировка: KF*

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.34 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Пороговое напряжение включения Ugs(th): 1.3 V

Максимально допустимый постоянный ток стока (Id): 0.85 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 30 ns

Выходная емкость (Cd): 30 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.27 Ohm

Тип корпуса: SC-70

Аналог (замена) для SI1304BDL

 

 

SI1304BDL Datasheet (PDF)

1.1. si1304bdl.pdf Size:222K _vishay

SI1304BDL
SI1304BDL

Si1304BDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)a Qg (Typ.) Definition 0.270 at VGS = 4.5 V 0.90 • TrenchFET® Power MOSFET 30 1.1 • 100 % Rg Tested 0.385 at VGS = 2.5 V 0.75 • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 D Marking Code 3 D KF XX L

4.1. si1304dl.pdf Size:65K _vishay

SI1304BDL
SI1304BDL

Si1304DL Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.350 @ VGS = 4.5 V 0.75 25 25 13 1.3 0.450 @ VGS = 2.5 V 0.66 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D KB XX Lot Traceability and Date Code S 2 Part # Code Top View Ordering Information: Si1304DL-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Param

 5.1. si1305edl.pdf Size:100K _vishay

SI1304BDL
SI1304BDL

Si1305EDL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.280 at VGS = - 4.5 V ± 0.92 • ESD Protection: 3000 V - 8 0.380 at VGS = - 2.5 V ± 0.79 • Compliant to RoHS Directive 2002/95/EC 0.530 at VGS = - 1.8 V ± 0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D

5.2. si1307edl.pdf Size:100K _vishay

SI1304BDL
SI1304BDL

Si1307EDL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.290 at VGS = - 4.5 V ± 0.91 • ESD Protection: 3000 V - 12 0.435 at VGS = - 2.5 V ± 0.74 • Compliant to RoHS Directive 2002/95/EC 0.580 at VGS = - 1.8 V ± 0.64 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3

 5.3. si1305dl.pdf Size:222K _vishay

SI1304BDL
SI1304BDL

Si1305DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition • TrenchFET® Power MOSFET: 1.8 V 0.280 at VGS = - 4.5 V - 0.92 • Compliant to RoHS Directive 2002/95/EC 0.380 at VGS = - 2.5 V - 0.79 - 8 0.530 at VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Cod

5.4. si1300bdl.pdf Size:224K _vishay

SI1304BDL
SI1304BDL

Si1300BDL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.85 at VGS = 4.5 V 0.4 • TrenchFET® Power MOSFET 20 0.335 • 100 % Rg Tested 1.08 at VGS = 2.5 V 0.35 • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) D G 1 Marking Code 3 D KE

 5.5. si1301dl.pdf Size:44K _vishay

SI1304BDL
SI1304BDL

Si1301DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 20 5.0 @ VGS = 2.5 V 100 SOT-323 SC-70 (3-Leads) Marking Code G 1 LG XX Lot Traceability 3 D and Date Code Part # Code S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS

5.6. si1308edl.pdf Size:245K _vishay

SI1304BDL
SI1304BDL

New Product Si1308EDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) • 100 % Rg Tested 0.132 at VGS = 10 V 1.5 • Typical ESD Performance 1800 V 30 0.144 at VGS = 4.5 V 1.4 1.4 nC • Material categorization: For definitions of compliance please see 0.185 at VGS = 2.5 V 1.3 ww

5.7. si1300dl.pdf Size:61K _vishay

SI1304BDL
SI1304BDL

Si1300DL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 20 20 2.5 @ VGS = 2.5 V 150 SOT-323 SC-70 (3-Leads) Marking Code G 1 KC XX 3 D Lot Traceability and Date Code S 2 Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V

5.8. si1307dl.pdf Size:95K _vishay

SI1304BDL
SI1304BDL

Si1307DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.290 at VGS = - 4.5 V ± 0.91 • TrenchFET® Power MOSFETs: 1.8 V Rated - 12 0.435 at VGS = - 2.5 V ± 0.74 • Compliant to RoHS Directive 2002/95/EC 0.580 at VGS = - 1.8 V ± 0.64 SOT-323 SC-70 (3-LEADS) G 1 LC

5.9. si1303edl.pdf Size:72K _vishay

SI1304BDL
SI1304BDL

Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.430 @ VGS = 4.5 V "0.72 20 20 0.480 @ VGS = 3.6 V "0.68 0.700 @ VGS = 2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LD XX Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter

5.10. si1303dl.pdf Size:221K _vishay

SI1304BDL
SI1304BDL

Si1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.430 at VGS = - 4.5 V - 0.72 • TrenchFET® Power MOSFETs - 20 0.480 at VGS = - 3.6 V - 0.68 • 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC 0.700 at VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1

5.11. si1302dl.pdf Size:212K _vishay

SI1304BDL
SI1304BDL

Si1302DL Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ()ID (A) • Halogen-free According to IEC 61249-2-21 Definition 0.480 at VGS = 10 V 0.64 30 • TrenchFET® Power MOSFET 0.700 at VGS = 4.5 V 0.53 • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 Marking Code KA XX 3 D Lot Traceability and Date Code S 2 Pa

5.12. pssi130-06.pdf Size:170K _igbt

SI1304BDL
SI1304BDL

ECO-PACTM 2 IGBT Module PSIG 130/06 IC25 = 121 A PSIS 130/06* VCES = 600 V PSSI 130/06* VCE(sat)typ.= 2.3 V PSI 130/06* Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 OP 9 IK 10 L9 NTC X13 L9 E2 E2 T16 GH 10 NTC X15 X16 X15 K10 X16 L9 NTC VX 18 F1 IK 10 AC 1 X16 PSI 130/06* PSIS 130/06* PSSI 130/06* *NTC optional IGBTs LMN S A IJK

5.13. psi130-06.pdf Size:170K _igbt

SI1304BDL
SI1304BDL

ECO-PACTM 2 IGBT Module PSIG 130/06 IC25 = 121 A PSIS 130/06* VCES = 600 V PSSI 130/06* VCE(sat)typ.= 2.3 V PSI 130/06* Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 OP 9 IK 10 L9 NTC X13 L9 E2 E2 T16 GH 10 NTC X15 X16 X15 K10 X16 L9 NTC VX 18 F1 IK 10 AC 1 X16 PSI 130/06* PSIS 130/06* PSSI 130/06* *NTC optional IGBTs LMN S A IJK

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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