SI1307DL
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI1307DL
Маркировка: LC*
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.29
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.45
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.85
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 3.2
nC
trⓘ -
Время нарастания: 32
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29
Ohm
Тип корпуса:
SOT-323
Аналог (замена) для SI1307DL
SI1307DL
Datasheet (PDF)
..1. Size:95K vishay
si1307dl.pdf 
Si1307DLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 TrenchFET Power MOSFETs: 1.8 V Rated- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1LC
8.1. Size:100K vishay
si1307edl.pdf 
Si1307EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 ESD Protection: 3000 V- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1Marking Code3
9.1. Size:104K 1
si1303dl.pdf 
Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1
9.2. Size:61K vishay
si1300dl.pdf 
Si1300DLNew ProductVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 25020202.5 @ VGS = 2.5 V 150SOT-323SC-70 (3-Leads)Marking CodeG 1KC XX3 DLot Traceabilityand Date CodeS 2Part # CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20
9.3. Size:221K vishay
si1303dl.pdf 
Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1
9.4. Size:224K vishay
si1300bdl.pdf 
Si1300BDLVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.85 at VGS = 4.5 V 0.4 TrenchFET Power MOSFET20 0.335 100 % Rg Tested1.08 at VGS = 2.5 V 0.35 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS) DG 1 Marking Code 3 D KE
9.5. Size:65K vishay
si1304dl.pdf 
Si1304DLVishay SiliconixN-Channel 25-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.350 @ VGS = 4.5 V0.752525131.30.450 @ VGS = 2.5 V 0.66SOT-323SC-70 (3-LEADS)G 1Marking Code3D KB XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewOrdering Information: Si1304DL-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Pa
9.6. Size:72K vishay
si1303edl.pdf 
Si1303EDLNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.430 @ VGS = 4.5 V"0.7220200.480 @ VGS = 3.6 V "0.680.700 @ VGS = 2.5 V "0.56SOT-323SC-70 (3-LEADS)G 1Marking Code3D LD XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
9.7. Size:100K vishay
si1305edl.pdf 
Si1305EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = - 4.5 V 0.92 ESD Protection: 3000 V- 8 0.380 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/EC0.530 at VGS = - 1.8 V 0.67SOT-323SC-70 (3-LEADS)G 1Marking Code3D
9.8. Size:222K vishay
si1305dl.pdf 
Si1305DLVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFET: 1.8 V0.280 at VGS = - 4.5 V - 0.92 Compliant to RoHS Directive 2002/95/EC0.380 at VGS = - 2.5 V - 0.79- 80.530 at VGS = - 1.8 V - 0.67SOT-323SC-70 (3-LEADS)G 1Marking Cod
9.9. Size:222K vishay
si1304bdl.pdf 
Si1304BDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET30 1.1 100 % Rg Tested0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1DMarking Code3DKF XXL
9.10. Size:44K vishay
si1301dl.pdf 
Si1301DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-323SC-70 (3-Leads)Marking CodeG 1LG XXLot Traceability3 Dand Date CodePart # CodeS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sourc
9.11. Size:212K vishay
si1302dl.pdf 
Si1302DLVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Halogen-free According to IEC 61249-2-21Definition0.480 at VGS = 10 V 0.6430 TrenchFET Power MOSFET0.700 at VGS = 4.5 V 0.53 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1Marking Code KA XX3DLot Traceability and Date Code S 2 Pa
9.12. Size:245K vishay
si1308edl.pdf 
New ProductSi1308EDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) 100 % Rg Tested0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization:For definitions of compliance please see0.185 at VGS = 2.5 V 1.3ww
9.13. Size:170K powersem
psi130-06.pdf 
ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK
9.14. Size:170K powersem
pssi130-06.pdf 
ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK
9.15. Size:1476K cn vbsemi
si1304bdl.pdf 
SI1304BDLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
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