Справочник MOSFET. SI1405BDH

 

SI1405BDH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI1405BDH
   Маркировка: BO*
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.47 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 8 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.6 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 108 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.112 Ohm
   Тип корпуса: SC-70

 Аналог (замена) для SI1405BDH

 

 

SI1405BDH Datasheet (PDF)

 ..1. Size:238K  vishay
 si1405bdh.pdf

SI1405BDH SI1405BDH

Si1405BDHVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.112 at VGS = - 4.5 V - 1.6 TrenchFET Power MOSFET- 8 0.160 at VGS = - 2.5 V - 1.6 3.67 nC Compliant to RoHS Directive 2002/95/EC0.210 at VGS = - 1.8 V - 1.6APPLICATIONS Load Switch for

 8.1. Size:245K  vishay
 si1405dl.pdf

SI1405BDH SI1405BDH

Si1405DLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFET: 1.8 V Rated- 8 0.160 at VGS = - 2.5 V 1.6 Compliant to RoHS Directive 2002/95/EC0.210 at VGS = - 1.8 V 1.4SOT-363SC-70 (6-LEADS)D 1 6 DMar

 9.1. Size:259K  vishay
 si1401edh.pdf

SI1405BDH SI1405BDH

New ProductSi1401EDHVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V- 12 14.1 nC 100 % Rg Tested0.070 at VGS = - 1.8 V - 4 Compl

 9.2. Size:75K  vishay
 si1407dl.pdf

SI1405BDH SI1405BDH

Si1407DLVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) rDS(on) ()ID (A)Pb-free 1.8 V RatedAvailable0.130 at VGS = - 4.5 V - 1.8RoHS*- 12 0.170 at VGS = - 2.5 V - 1.5COMPLIANT0.225 at VGS = - 1.8 V - 1.3SOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeOC XX5D 2 DLot Traceabilityand Date Code

 9.3. Size:409K  vishay
 si1403dl.pdf

SI1405BDH SI1405BDH

Si1403DLNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)Pb-freeAvailable0.180 at VGS = - 4.5 V 1.5RoHS*- 25 0.200 at VGS = - 3.6 V 1.4COMPLIANT0.265 at VGS = - 2.5 V 1.2SOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeOA XX5D 2 DLot Traceabilityand Date CodeG

 9.4. Size:229K  vishay
 si1406dh.pdf

SI1405BDH SI1405BDH

Si1406DHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.065 at VGS = 4.5 V 3.9 TrenchFET Power MOSFETs: 1.8 V Rated0.075 at VGS = 2.5 V 20 3.6 Thermally Enhanced SC-70 Package0.096 at VGS = 1.8 V 3.2 Compliant to RoHS Directive 2002/95/ECAPPLICAT

 9.5. Size:91K  vishay
 si1400dl.pdf

SI1405BDH SI1405BDH

Si1400DLVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.150 at VGS = 4.5 V 1.7 TrenchFET Power MOSFET: 2.5 V Rated - 200.235 at VGS = 2.5 V 1.3 Compliant to RoHS Directive 2002/95/ECSOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeND XX5D 2 DLot Traceab

 9.6. Size:105K  vishay
 si1404bd si1404bdh.pdf

SI1405BDH SI1405BDH

Si1404BDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.238 at VGS = 4.5 V 1.9 TrenchFET Power MOSFET30 1.1 nC0.380 at VGS = 2.5 V 1.51 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSC-70 (6-LEADS) Load Switch f

 9.7. Size:94K  vishay
 si1402dh.pdf

SI1405BDH SI1405BDH

Si1402DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.077 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET: 2.5 V Rated 300.120 at VGS = 2.5 V 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable ApplicationsSOT-363SC-70 (6-LEA

 9.8. Size:235K  vishay
 si1403cdl.pdf

SI1405BDH SI1405BDH

Si1403CDLVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.140 at VGS = - 4.5 V - 2.1 TrenchFET Power MOSFET- 20 0.160 at VGS = - 3.6 V - 1.9 4 nC 100 % Rg Tested0.222 at VGS = - 2.5 V - 1.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.9. Size:249K  vishay
 si1403bdl.pdf

SI1405BDH SI1405BDH

Si1403BDLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.150 at VGS = - 4.5 V - 1.5 TrenchFET Power MOSFET 0.175 at VGS = - 3.6 V - 1.4 2.9- 20 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 2.5 V - 1.2SOT-363SC-70 (6-LEADS)D 1 6 D

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