Справочник MOSFET. SI1555DL

 

SI1555DL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI1555DL
   Маркировка: RB*
   Тип транзистора: MOSFET
   Полярность: NP
   Максимальная рассеиваемая мощность (Pd): 0.27 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.4 V
   Максимально допустимый постоянный ток стока |Id|: 0.66 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 1.5 nC
   Время нарастания (tr): 16 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.385 Ohm
   Тип корпуса: SOT-363

 Аналог (замена) для SI1555DL

 

 

SI1555DL Datasheet (PDF)

 ..1. Size:233K  vishay
 si1555dl.pdf

SI1555DL SI1555DL

Si1555DLVishay SiliconixComplementary Low-Threshold MOSFET PairFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.385 at VGS = 4.5 V0.70 TrenchFET Power MOSFETN-Channel 200.630 at VGS = 2.5 V0.54 Compliant to RoHS Directive 2002/95/EC0.600 at VGS = - 4.5 V - 0.600.850 at VGS = - 2.5 V - 0.50P-Cha

 0.1. Size:889K  cn vbsemi
 si1555dl-t1.pdf

SI1555DL SI1555DL

SI1555DL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V

 9.1. Size:258K  vishay
 si1553cdl.pdf

SI1555DL SI1555DL

Si1553CDLVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFETN-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC0.850 at VGS

 9.2. Size:269K  vishay
 si1557dh.pdf

SI1555DL SI1555DL

Si1557DHVishay SiliconixN- and P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin

 9.3. Size:235K  vishay
 si1551dl.pdf

SI1555DL SI1555DL

Si1551DLVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition1.9 at VGS = 4.5 V 0.30 TrenchFET Power MOSFET: 2.5 V Rated3.7 at VGS = 2.7 V N-Channel 20 0.22 0.72 Compliant to RoHS Directive 2002/95/EC4.2 at VGS = 2.5 V0.210.995 at VGS = - 4.5 V

 9.4. Size:874K  cn vbsemi
 si1553cdl-t1-ge3.pdf

SI1555DL SI1555DL

Si1553CDL-T1-GE3www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = -

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