SI2323DDS - аналоги, параметры транзистора - Справочник транзисторов

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Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization 0.039 at VGS = - 4.5 V - 5.3 For definitions of compliance please see - 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nC www.vishay.com/doc?99912 0.075 at VGS = - 1.8 V - 3.8 APPLICATION

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SI2323DDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

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Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.1 0.068 at VGS = - 1.8 V - 3.5 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S

7.2. Size:1691K kexin
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SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23 Unit mm Features 2.9+0.1 -0.1 +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V) 1 2 RDS(ON) 68m (VGS =-1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A