SI2331DS - описание и поиск аналогов

Si2331DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 0.048 at VGS = - 4.5 V - 3.6 RoHS 0.062 at VGS = - 2.5 V - 12 - 3.2 COMPLIANT APPLICATIONS 0.090 at VGS = - 1.8 V - 2.7 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View

Si2333DDS Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.028 at VGS = - 4.5 V - 6e For definitions of compliance please see 0.032 at VGS = - 3.7 V - 6e www.vishay.com/doc?99912 - 12 0.040 at VGS = - 2.5 V - 6e 9 nC 0.063 at

Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6 APPLICATIONS 0.059 at VGS = - 1.8 V - 3.9 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S

Si2335DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.051 at VGS = - 4.5 V - 4.0 TrenchFET Power MOSFETs 1.8 V Rated 0.070 at VGS = - 2.5 V - 12 - 3.5 0.106 at VGS = - 1.8 V - 3.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2335DS (E5)* *Marking Code Orde

New Product Si2334DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.044 at VGS = 4.5 V 4.9 TrenchFET Power MOSFET 30 3.7 nC 0.050 at VGS = 2.5 V 4.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter for

New Product Si2338DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.028 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.033 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SOT-23 APP

New Product Si2336DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 4.5 V TrenchFET Power MOSFET 5.2 100 % Rg Tested 0.046 at VGS = 2.5 V 30 4.9 5.7 nC Compliant to RoHS Directive 2002/95/EC 0.052 at VGS = 1.8 V 4.1 APPLICATI

Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 2.5 V - 4.5 9 nC - 12 0.059 at VGS = - 1.8 V - 3.9 APPLICATIONS Load Switc

Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 2.5 V - 4.5 9 nC - 12 0.059 at VGS = - 1.8 V - 3.9 APPLICATIONS Load Switc

Si2337DS Vishay Siliconix P-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.270 at VGS = - 10 V - 2.2 TrenchFET Power MOSFET - 80 7 0.303 at VGS = - 6 V - 2.1 TO-236 (SOT-23) S G 1 3 D S 2 G Top View Si2337DS (E7)* * Marking Code D Ordering Information Si2337DS-T

SI2333 Features TrenchFET Power Mosfet Excellent RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-Channel MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -5

SMD Type MOSFET P-Channel Enhancement MOSFET SI2335DS (KI2335DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4-0.1 3 VDS (V) =-12V ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V) 1 2 RDS(ON) 70m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 106m (VGS =-1.8V) 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drai

SMD Type MOSFET P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V) 1 2 +0.02 +0.1 RDS(ON) 45m (VGS =-2.5V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 59m (VGS =-1.8V) G 1 3 D 1. Gate 2. Source S 2 3. D

SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V) 1 2 RDS(ON) 32m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Max

SMD Type MOSFET P-Channel Enhancement MOSFET SI2335DS (KI2335DS) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 0.95-0.1 RDS(ON) 106m (VGS =-1.8V) 0.1+0.05 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Abso

SMD Type MOSFET P-Channel Enhancement MOSFET SI2337DS (KI2337DS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4-0.1 3 VDS (V) =-80V ID =-2.2A (VGS =-10V) RDS(ON) 270m (VGS =-10V) S 1 2 RDS(ON) 303m (VGS =-6V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G G 1 1.Gate 3 D 2.Source S 2 3.Drain D Absolute Maximum Ratings Ta = 2

SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V) 1 2 RDS(ON) 32m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute

SMD Type MOSFET P-Channel Enhancement MOSFET SI2337DS (KI2337DS) SOT-23-3 Unit mm +0.2 Features 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) =-80V 3 ID =-2.2A (VGS =-10V) RDS(ON) 270m (VGS =-10V) S RDS(ON) 303m (VGS =-6V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 G 1 G 3 D 1. Gate S 2 2. Source 3. Drain D Absolute Maximum Ratings T

SMD Type MOSFET P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V) 1 2 +0.02 +0.1 RDS(ON) 45m (VGS =-2.5V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 59m (VGS =-1.8V) G 1 3 D 1. Gate 2. Source S 2 3. D

SI2333 MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit Drain-Source Voltage BV -12 V DSS Gate- Source Voltage V +8 V GS Drain Current (continuous) I -5.1 A D Drain Current (pulsed) I -20 A DM Total Device Dissipa

Si2338DS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT

SI2333DDS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION

SI2335DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

SI2333DS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

SI2333CDS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA