SI3440DV - описание и поиск аналогов

Si3440DV Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.375 at VGS = 10 V 1.5 TrenchFET Power MOSFET 150 0.400 at VGS = 6.0 V 1.4 PWM Optimized for Fast Switching In Small Footprint 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLIC

SI3440DV www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS

Si3440ADV www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES TSOP-6 Single S ThunderFET power MOSFET 4 D 100 % Rg tested 5 D Material categorization 6 for definitions of compliance please see www.vishay.com/doc?99912 3 APPLICATIONS D G 2 DC/DC converters D 1 D Boost converters Top View G LED backlighting Marking code

PD-95240 Si3443DVPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 l Lead-Free Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per

PD- 93795A Si3443DV HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -20V Surface Mount 2 5 D D Available in Tape & Reel -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This

April 2001 Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features DS(ON) GS DS(ON) GS

Si3443CDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.060 at VGS = - 4.5 V - 4.7 PWM Optimized 0.084 at VGS = - 2.7 V - 3.9 7.53 nC 100 % Rg Tested - 20 Compliant to RoHS Directive 2002/95/EC 0.100 at VGS = -

Si3443DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 100% Rg Tested 0.065 @ VGS = -4.5 V -4.5 0.090 @ VGS = -2.7 V -3.8 -20 0.100 @ VGS = -2.5 V -3.7 TSOP-6 (4) S Top View 1 6 (3) G 3 mm 5 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information Si3443DV-T1 E3 (Lead Free) P-Channel MOSFET ABSOL

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering

Si3446ADV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition 0.037 at VGS = 4.5 V 6 20 5.6 nC TrenchFET Power MOSFET 0.065 at VGS = 2.5V 6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications Small High Fre

Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.027 at VGS = 10 V 8d For definitions of compliance please see 20 0.030 at VGS = 4.5 V 7.5 4.3 nC www.vishay.com/doc?99912 0.049 at VGS = 2.5 V 6.1 APPLICATIONS TSO

Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.090 at VGS = - 2.7 V 100 % Rg Tested - 20 - 3.8 Compliant to RoHS Directive 2002/95/EC 0.100 at VGS = - 2.5 V - 3.7 TSOP-6 (4) S Top View 1 6

Si3445DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 4.5 V 5.6 TrenchFET Power MOSFETs 0.060 at VGS = - 2.5 V - 8 4.7 1.8 V Rated 0.080 at VGS = - 1.8 V 2.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (4) S

Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized 0.050 at VGS = - 2.5 V - 6.6 12 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.068 at VGS = - 1.8 V - 5.6 APPLICATIONS

Si3447DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = -4.5 V "5.2 -12 0.070 @ VGS = -2.5 V "4.4 0.095 @ VGS = -1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V

Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, e Qg (TYP.) PWM optimized 0.047 at VGS = -4.5 V -4 100 % Rg tested -20 0.080 at VGS = -2.7 V -4 9 nC Material categorization 0.090 at VGS = -2.5 V -4 For definitions of compliance please see TSOP-6 Single w

Si3441BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.090 at VGS = - 4.5 V - 2.9 - 20 TrenchFET Power MOSFETs 0.130 at VGS = - 2.5 V - 2.45 Compliant to RoHS Directive 2002/95/EC TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Infor

Si3446DV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.045 @ VGS = 4.5 V 5.3 RoHS 20 20 COMPLIANT 0.065 @ VGS = 2.5 V 4.4 (1, 2, 5, 6) D TSOP-6 Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3446DV-T1 N-Channel MOSFET Si3446DV-T1 E3 (Lead (Pb) fr

Si3447BDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET 1.8 V Rated 0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance 0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/EC APPL

Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized 0.050 at VGS = - 2.5 V - 6.6 12 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.068 at VGS = - 1.8 V - 5.6 APPLICATIONS

Si3441DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.10 @ VGS = - 4.5 V -3.3 -20 20 0.135 @ VGS = -2.5 V -2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20

Si3445ADV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 4.5 V - 5.8 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 2.5 V - 8 - 4.9 0.080 at VGS = - 1.8 V - 4.2 TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering

New Product Si3443CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.060 at VGS = - 4.5 V - 4.7 PWM Optimized 0.084 at VGS = - 2.7 V - 3.9 7.53 nC - 20 100 % Rg Tested 0.100 at VGS = - 2.5 V - 3.4 APPLICATIONS HD

PD- 93795B Si3443DV HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area

March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.075 @ VGS =2.7 V. high cell density, DMOS technology. This very high density process is tai

SI3442CDV www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC