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SI3456BDV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI3456BDV
   Маркировка: 6B*
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 4.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 8.6 nC
   Время нарастания (tr): 15 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для SI3456BDV

 

 

SI3456BDV Datasheet (PDF)

 ..1. Size:182K  vishay
 si3456bdv.pdf

SI3456BDV SI3456BDV

Si3456BDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET300.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.

 8.1. Size:193K  vishay
 si3456ddv.pdf

SI3456BDV SI3456BDV

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

 8.2. Size:65K  vishay
 si3456dv.pdf

SI3456BDV SI3456BDV

Si3456DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 10 V 5.130300.065 @ VGS = 4.5 V 4.3(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3456DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS

 8.3. Size:190K  vishay
 si3456cd.pdf

SI3456BDV SI3456BDV

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

 8.4. Size:191K  vishay
 si3456cdv.pdf

SI3456BDV SI3456BDV

Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1

 8.5. Size:191K  vishay
 si3456dd.pdf

SI3456BDV SI3456BDV

New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve

 8.6. Size:862K  cn vbsemi
 si3456ddv-t1.pdf

SI3456BDV SI3456BDV

SI3456DDV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC

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