Справочник MOSFET. SI3465DV

 

SI3465DV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI3465DV
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.14 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для SI3465DV

 

 

SI3465DV Datasheet (PDF)

 ..1. Size:199K  vishay
 si3465dv.pdf

SI3465DV SI3465DV

Si3465DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = - 10 V - 4.0- 20 TrenchFET Power MOSFET0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6Top View(

 9.1. Size:242K  vishay
 si3460bdv.pdf

SI3465DV SI3465DV

Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica

 9.2. Size:185K  vishay
 si3469dv.pdf

SI3465DV SI3465DV

Si3469DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET- 200.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6- Desktop

 9.3. Size:211K  vishay
 si3460bd.pdf

SI3465DV SI3465DV

Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica

 9.4. Size:231K  vishay
 si3464dv.pdf

SI3465DV SI3465DV

New ProductSi3464DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.024 at VGS = 4.5 V TrenchFET Power MOSFET8a 100 % Rg Tested20 0.028 at VGS = 2.5 V 8a 11 nC Compliant to RoHS Directive 2002/95/EC0.030 at VGS = 1.8 V 7.1APPLICATIO

 9.5. Size:181K  vishay
 si3467dv.pdf

SI3465DV SI3465DV

Si3467DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET- 200.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- PC- Game MachineTSOP-6Top View1 6(4)

 9.6. Size:177K  vishay
 si3460dv.pdf

SI3465DV SI3465DV

Si3460DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 6

 9.7. Size:612K  vishay
 si3460dd si3460ddv.pdf

SI3465DV SI3465DV

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL

 9.8. Size:612K  vishay
 si3460ddv.pdf

SI3465DV SI3465DV

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL

 9.9. Size:862K  cn vbsemi
 si3460dv-t1.pdf

SI3465DV SI3465DV

SI3460DV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/

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