SI3465DV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI3465DV
Маркировка: 5C
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.14 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.5 nC
Время нарастания (tr): 13 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: TSOP-6
SI3465DV Datasheet (PDF)
si3465dv.pdf
Si3465DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = - 10 V - 4.0- 20 TrenchFET Power MOSFET0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6Top View(
si3460bdv.pdf
Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica
si3469dv.pdf
Si3469DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET- 200.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6- Desktop
si3460bd.pdf
Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica
si3464dv.pdf
New ProductSi3464DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.024 at VGS = 4.5 V TrenchFET Power MOSFET8a 100 % Rg Tested20 0.028 at VGS = 2.5 V 8a 11 nC Compliant to RoHS Directive 2002/95/EC0.030 at VGS = 1.8 V 7.1APPLICATIO
si3467dv.pdf
Si3467DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET- 200.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- PC- Game MachineTSOP-6Top View1 6(4)
si3460dv.pdf
Si3460DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 6
si3460dd si3460ddv.pdf
Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
si3460ddv.pdf
Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
si3460dv-t1.pdf
SI3460DV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TPC6101 | IRF5800
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C