SI3499DV - параметры транзистора MOSFET, его аналоги, datasheet

SI3499DV Datasheet (PDF)

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Si3499DVVishay SiliconixP-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.023 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.029 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 8 280.036 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = - 1.5

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Si3493BDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET- 8.0a PWM Optimized- 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

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Si3495DVVishay SiliconixP-Channel 20-V (D-S), 1.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET: 1.5 V Rated0.030 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance- 200.038 at VGS = - 1.8 V - 5.2 100 % Rg Tested0.048 at VGS = -

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Si3493DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESTSOP-6 Single TrenchFET Gen III p-channel power MOSFETS4 RDS(on) rating at VGS = -1.8 VD5D 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see3www.vishay.com/doc?99912G2DAPPLICATIONS1 SD Battery management in mobile d