SI3499DV - аналоги, параметры транзистора - Справочник транзисторов

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Si3499DV Vishay Siliconix P-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET 1.5 V Rated 0.029 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance - 8 28 0.036 at VGS = - 1.8 V - 5.2 100 % Rg Tested 0.048 at VGS = - 1.5

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Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv

9.2. Size:180K vishay
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Si3495DV Vishay Siliconix P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET 1.5 V Rated 0.030 at VGS = - 2.5 V - 6.2 Ultra-Low On-Resistance - 20 0.038 at VGS = - 1.8 V - 5.2 100 % Rg Tested 0.048 at VGS = -

9.3. Size:227K vishay
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Si3493DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Single TrenchFET Gen III p-channel power MOSFET S 4 RDS(on) rating at VGS = -1.8 V D 5 D 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see 3 www.vishay.com/doc?99912 G 2 D APPLICATIONS 1 S D Battery management in mobile d