Справочник MOSFET. SI3586DV

 

SI3586DV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI3586DV
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 52 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для SI3586DV

 

 

SI3586DV Datasheet (PDF)

 ..1. Size:207K  vishay
 si3586dv.pdf

SI3586DV SI3586DV

Si3586DVVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET0.070 at VGS = 2.5 V Fast Switching In Small FootprintN-Channel 20 3.2 Very Low RDS(on) for Increased Efficiency0.100 at VGS = 1.8 V 2.5

 9.1. Size:217K  vishay
 si3588dv.pdf

SI3586DV SI3586DV

Si3588DVVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = 4.5 V 3.0 TrenchFET Power MOSFETs: 1.8 V Rated0.100 at VGS = 2.5 V N-Channel 20 2.6 Compliant to RoHS Directive 2002/95/EC0.128 at VGS = 1.8 V 2.30.145 at VGS = - 4.5 V - 2.20

 9.2. Size:250K  vishay
 si3585cdv.pdf

SI3586DV SI3586DV

Si3585CDVVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg Tested0.058 at VGS = 4.5 V 3.9 Material categorization:N-Channel 20 2.9 nCFor definitions of compliance please see 0.078 at VGS = 2.5 V 3.3www.vishay.com/doc?999120.195 at VGS = - 4.5 V - 2.1P

 9.3. Size:958K  cn vbsemi
 si3585dv-t1.pdf

SI3586DV SI3586DV

SI3585DV-T1www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 a

 9.4. Size:1542K  cn vbsemi
 si3585cdv.pdf

SI3586DV SI3586DV

SI3585CDVwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at

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