SI4101DY datasheet, подбор замены

 ..1. Size:272K  vishay
 si4101dy.pdf 

New Product Si4101DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg and UIS Tested 0.0060 at VGS = - 10 V - 25.7 Material categorization - 30 65 nC For definitions of compliance please see 0.0080 at VGS = - 4.5 V - 22.3 www.vishay.com/doc?99912 SO-8 APPLICATIONS

 9.1. Size:241K  vishay
 si4102dy.pdf 

Si4102DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.158 at VGS = 10 V 3.8 TrenchFET Power MOSFET 100 4.6 nC 100 % UIS Tested 0.175 at VGS = 6 V 3.6 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D

 9.2. Size:270K  vishay
 si4108dy.pdf 

New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0098 at VGS = 10 V 75 36 nC 20.5 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1

 9.3. Size:241K  vishay
 si4100dy.pdf 

Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.063 at VGS = 10 V 6.8 TrenchFET Power MOSFET 100 9 nC 100 % UIS Tested 0.084 at VGS = 6 V 5.8 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D

 9.4. Size:255K  vishay
 si4104dy.pdf 

New Product Si4104DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.105 at VGS = 10 V TrenchET Power MOSFET 100 4.6 8.5 nC 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 High Freque