SI4166DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4166DY Datasheet (PDF)

..1. Size:270K vishay
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New ProductSi4166DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS0.0039 at VGS = 10 V 30.5 100 % Rg and UIS Tested COMPLIANT 30 21.5 nC0.0055 at VGS = 4.5 V 25.6APPLICATIONS Low-Side DC/DC Conversion- Notebook PC- GamingSO-8 D SD1 8

9.1. Size:270K vishay
si4164dy.pdf pdf_icon

New ProductSi4164DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS0.0032 at VGS = 10 V 30 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC0.0039 at VGS = 4.5 V 26.3APPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PCSO-8 Gamin

9.2. Size:270K vishay
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New ProductSi4160DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0049 at VGS = 10 V 25.4 100 % Rg Tested30 16.9 nC0.0063 at VGS = 4.5 V 100 % UIS Tested22.4APPLICATIONS Notebook- Vcore low side- DC/DCSO-8 D

9.3. Size:255K vishay
si4168dy.pdf pdf_icon

Si4168DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0057 at VGS = 10 V 24 100 % Rg Tested30 13.8 nC 100 % UIS Tested0.0076 at VGS = 4.5 V 21APPLICATIONS Notebook DC/DCSO-8DSD1 8SD2 7SD3 6GGD4 5Top ViewSOrdering Info