SI4427BDY - Даташиты. Аналоги. Основные параметры

Si4427BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0105 at VGS = - 10 V - 12.6 TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V - 11.5 - 30 Compliant to RoHS Directive 2002/95/EC 0.0195 at VGS = - 2.5 V - 9.2 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G

Si4427BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0105 at VGS = - 10 V - 12.6 TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V - 11.5 - 30 Compliant to RoHS Directive 2002/95/EC 0.0195 at VGS = - 2.5 V - 9.2 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G

Si4427DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETs 0.0105 @ VGS = 10 V 13.3 30 0.0125 @ VGS = 4.5 V 12.2 0.0195 @ VGS = 2.5 V 9.8 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View Ordering Information Si4427DY-T1 P-Channel MOSFET Si4427DY-T1 E3 (Lead (P

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 W @ VGS = 4.5 V that has been especially tailored to minimize on-state resistance and yet maintain superior switc

Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2

Si4425DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) FEATURES 0.014 @ VGS = -10 V -11 D TrenchFETr Power MOSFET -30 -30 0.023 @ VGS = -4.5 V -8.5 Pb-free Available SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4425DY Si4425DY-T1 (with Tape and Reel) P-Channel MOSFET Si4425DY E3 (Lead (Pb)-Fr

PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate

Si4426DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 8.5 TrenchFET Power MOSFETs 20 0.035 at VGS = 2.5 V 7.1 Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View S Ordering Informatio

Si4421DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.00875 at VGS = - 4.5 V - 14 RoHS COMPLIANT 0.01075 at VGS = - 2.5 V - 20 - 12 APPLICATIONS Game Station 0.0135 at VGS = - 1.8 V - 11 - Load Switch SO-8 S S 1 8 D S D 2 7 S 3 6 D G G

Si4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.009 @ VGS = 10 V 13.5 30 30 0.013 @ VGS = 4.5 V 11 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S Ordering Information Si4420DY N-Channel MOSFET Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL

Si4420BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET 30 0.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4420BDY-T1-E3 (Lea

PD - 95729 Si4420DYPbF HEXFET Power MOSFET l N-Channel MOSFET A A l Low On-Resistance 1 8 S D VDSS = 30V l Low Gate Charge 2 7 S D l Surface Mount 3 6 S D l Logic Level Drive 4 5 l Lead-Free G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-res

Si4423DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0075 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET 0.009 at VGS = - 2.5 V - 13 - 20 Compliant to RoHS Directive 2002/95/EC 0.0115 at VGS = - 1.8 V - 12 APPLICATIONS Game Station SO-8 - Load Switc

Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D VGS Surge Protection to 18 V D ESD Protected 4000 V 0.0105 @ VGS = 10 V 13.0 30 0.0125 @ VGS = 4.5 V 12.0 APPLICATIONS 0.0195 @ VGS = 2.5 V 9.0 D Battery Switch D Load Switch D SO-8 5.5 kW SD 1 8 G S D 2 7

Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2

Si4425BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.012 at VGS = - 10 V - 11.4 TrenchFET Power MOSFET - 30 0.019 at VGS = - 4.5 V - 9.1 Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches -

SI4420DY www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to RoHS

SI4425DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Deskt

SI4425BDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC

SI4421DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7