SI4430BDY datasheet, подбор замены

 ..1. Size:229K  vishay
 si4430bdy.pdf 

Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs 30 24 0.006 at VGS = 4.5 V 17 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4430BDY-T1-E3 (Le

 6.1. Size:226K  vishay
 si4430bd.pdf 

Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs 30 24 0.006 at VGS = 4.5 V 17 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4430BDY-T1-E3 (Le

 8.1. Size:50K  vishay
 si4430dy.pdf 

Si4430DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 30 30 0.008 @ VGS = 4.5 V "17 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V V Ga

 8.2. Size:3798K  cn szxunrui
 si4430.pdf 

SOP-8 Plastic-Encapsulate MOSFETS SI4430 N-Channel Enhancement Mode Power MOSFET SO-8L D D D Description D The SI4430 uses advanced trench technology to provide G G S excellent RDS(ON) and low gate charge . The complementary S S S S SO-8 S Pin 1 MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit D