SI4430BDY - параметры транзистора MOSFET, его аналоги, datasheet

SI4430BDY Datasheet (PDF)

..1. Size:229K vishay
si4430bdy.pdf pdf_icon

Si4430BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs30 240.006 at VGS = 4.5 V 17 100 % Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5 GTop ViewSOrdering Information: Si4430BDY-T1-E3 (Le

6.1. Size:226K vishay
si4430bd.pdf pdf_icon

8.1. Size:50K vishay
si4430dy.pdf pdf_icon

Si4430DYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.004 (typ)@ VGS = 10 V "2330300.008 @ VGS = 4.5 V "17DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS 30VVGa

8.2. Size:3798K cn szxunrui
si4430.pdf pdf_icon

SOP-8 Plastic-Encapsulate MOSFETS SI4430N-Channel Enhancement Mode Power MOSFET SO-8LDDDDescription DThe SI4430 uses advanced trench technology to provide GGSexcellent RDS(ON) and low gate charge . The complementary S SSSSO-8 SPin 1MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuitD

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .