Si4438DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0027 at VGS = 10 V 36 TrenchFET Power MOSFET30 41 nC0.004 at VGS = 4.5 V 29 100 % Rg TestedAPPLICATIONS DC-to-DC and AC-to-DC Oring Diode ApplicationsSO-8 DSD1 8 SD2 7

PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon

October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

Si4433DYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Fast SwitchingD 100% Rg Tested0.110 @ VGS = -4.5 V -3.9-20 0.160 @ VGS = -2.5 V -3.2APPLICATION0.240 @ VGS = -1.8 V -2.6D DC-DC ConversionD Asynchronous Buck ConverterD Voltage InverterSSO-8SD1 8S D2 7GSD3 6G D4 5

Si4430DYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.004 (typ)@ VGS = 10 V "2330300.008 @ VGS = 4.5 V "17DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS 30VVGa

Si4430BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs30 240.006 at VGS = 4.5 V 17 100 % Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5 GTop ViewSOrdering Information: Si4430BDY-T1-E3 (Le

PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon

Si4434DYVishay SiliconixN-Channel 250-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RrDS(on) ()ID (A)Definition0.155 at VGS = 10 V 3.0 PWM-Optimized TrenchFET Power MOSFET2500.162 at VGS = 6.0 V 2.9 100 % Rg Tested Avalanche TestedAPPLICATIONS Primary Side Switch In:- Telecom Power Supplies- D

Si4431ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 10 V7.230300.052 @ VGS = 4.5 V 5.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431ADY-T1P-Channel MOSFETSi4431ADY-T1E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS (TA

New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit

New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit

Si4431DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% UIS Tested0.040 @ VGS = 10 V "5.830300.070 @ VGS = 4.5 V "4.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431DY-T1P-Channel MOSFETSi4431DY-T1E3 (Lead (Pb)-Free)ABSOLUTE MAXIMUM RAT

Si4435DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD Lead (Pb)-Free Version is RoHSVDS (V) rDS(on) (W) ID (A)Compliant0.02 @ VGS = 10 V 8.030300.035 @ VGS = 4.5 V 6.0SSO-8SD1 8GS D2 7SD3 6G D4 5DTop ViewP-Channel MOSFETOrdering Information: Si4435DY-T1REV ASi4435DY-T1AE3 (Lead (Pb)-Free)ABSOLU

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)

New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS

Si4430BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs30 240.006 at VGS = 4.5 V 17 100 % Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5 GTop ViewSOrdering Information: Si4430BDY-T1-E3 (Le

PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis

Si4435FDYwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen III p-channel power MOSFETD 5D 6 100% Rg testedD 7 Material categorization: 8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONSSG33 Adapter switchSS22SS11 Load switchSTop View DC

New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)

Si4435BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = - 10 V - 9.1 TrenchFET Power MOSFET- 300.035 at VGS = - 4.5 V Advanced High Cell Density Process- 6.9 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches B

New ProductSi4436DYVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.036 at VGS = 10 V 860 10.5 nC Optimized for Low Side Synchronous0.043 at VGS = 4.5 V 8Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONS

PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis

SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID

SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID

SOP-8 Plastic-Encapsulate MOSFETS SI4430N-Channel Enhancement Mode Power MOSFET SO-8LDDDDescription DThe SI4430 uses advanced trench technology to provide GGSexcellent RDS(ON) and low gate charge . The complementary S SSSSO-8 SPin 1MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuitD

SI4431CDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S

SI4435DY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3

SI4435BDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D