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SI4896DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4896DY
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SI4896DY

 

 

SI4896DY Datasheet (PDF)

 ..1. Size:244K  vishay
 si4896dy.pdf

SI4896DY SI4896DY

Si4896DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0165 at VGS = 10 V 9.5 TrenchFET Power MOSFETs800.022 at VGS = 6.0 V 8.3 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information:

 9.1. Size:227K  vishay
 si4892dy.pdf

SI4896DY SI4896DY

Si4892DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.012 at VGS = 10 V 12.4 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9.6 High Efficiency PWM Optimized 100 % Rg Tested 100 % UIS TestedDSO-8SD1 8S D2 7GS D3 6N-Channel

 9.2. Size:226K  vishay
 si4894bdy.pdf

SI4896DY SI4896DY

Si4894BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 12 TrenchFET Power MOSFET300.016 at VGS = 4.5 V 9.8 100 % Rg Tested DSO-8S D1 8S 2 7 DGS 3 6 D4 5G DTop ViewSOrdering Information:Si4894BDY-T1-E3 (Lead (Pb)

 9.3. Size:105K  vishay
 si4894dy.pdf

SI4896DY SI4896DY

Si4894DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS CompliantPb-free0.012 @ VGS = 10 V 12.53030Available0.018 @ VGS = 4.5 V 10.2DSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Channel MOSFETOrdering Information: Si4894DY-T1Si4894DY-T1E3 (Lea

 9.4. Size:237K  vishay
 si4890dy.pdf

SI4896DY SI4896DY

Si4890DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = 10 V 11 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DS D1 8S D2 7S D

 9.5. Size:88K  vishay
 si4890bd si4890bdy.pdf

SI4896DY SI4896DY

Si4890BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.012 at VGS = 10 V 16 TrenchFET Power MOSFET30 10 nC 100 % Rg and UIS Tested0.016 at VGS = 4.5 V 14APPLICATIONS Notebook- System Power- Adapter SwitchSO-8 DC/DCDSD

 9.6. Size:866K  cn vbsemi
 si4890bdy-t1.pdf

SI4896DY SI4896DY

SI4890BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

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