SI4916DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4916DY
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 11 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: SO-8
SI4916DY Datasheet (PDF)
si4916dy.pdf
Si4916DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.60.023 at VGS = 4.5 V 8.5 100 % Rg Tested300.018 at VGS = 10 V 10.5Channel-2 8.9APPL
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4913dy.pdf
Si4913DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.015 at VGS = - 4.5 V - 9.4 TrenchFET Power MOSFET0.019 at VGS = - 2.5 V - 20 - 8.4 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = - 1.8 V - 7.5APPLICATIONS Load SwitchingS1 S2
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4914bdy.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4910dy.pdf
Si4910DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFET40 9.6 100 % Rg and UIS Tested0.032 at VGS = 4.5 V 4.8APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1
si4914bd.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4913dy.pdf
SI4913DYwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F