SI4931DY - Даташиты. Аналоги. Основные параметры

Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 12 - 8.1 Advanced High Cell Density Process 0.028 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APP

Si4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET 30 0.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 G1 G2 Top View S1 S2

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1

Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = 10 V 6.9 TrenchFET Power MOSFET 30 4.5 nC Compliant to RoHS Directive 2002/95/EC 0.051 at VGS = 4.5 V 5.7 APPLICATIONS Low Current DC/DC Conversion Notebook Syste

Si4936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Available Compliant 0.037 @ VGS = 10 V 5.8 30 30 0.055 @ VGS = 4.5 V 4.7 D1 D2 SO-8 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information

Si4933DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.014 at VGS = - 4.5 V - 9.8 TrenchFET Power MOSFET 0.017 at VGS = - 2.5 V - 12 - 8.9 Compliant to RoHS Directive 2002/95/EC 0.022 at VGS = - 1.8 V - 7.8 APPLICATIONS Load Switching S1 S2

Si4932DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested 0.015 at VGS = 10 V 8 30 14.7 100 % UIS Tested 0.017 at VGS = 4.5 V 8 APPLICATIONS DC/DC Conversion Load Switching D1 D2 SO-8 S1 1 D1

Si4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET 30 0.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 G1 G2 Top View S1 S2

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1