SI4946BEY - Даташиты. Аналоги. Основные параметры

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

SI4946BEY-T1www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

Si4946EYVishay SiliconixDual N-Channel 60-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.055 @ VGS = 10 V 4.5 Pb-freeAvailable60600.075 @ VGS = 4.5 V 3.9SO-8DS1 1 D18G1 2 D17S2 3 D26GG2 4 D25Top ViewSOrdering Information: Si4946EYSi4946EY-

Si4946CDYwww.vishay.comVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESSO-8 DualD2 TrenchFET power MOSFETD2 5D1 6 100 % Rg testedD17 Material categorization: 8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONSG233S2S222 DC/DC converterG1 D1 D2G11 Load switchS1Top View Inve

SMD Type MOSFETDual N-Channel MOSFETSI4946DY (KI4946DY)SOP-8 Features VDS (V) = 60V1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V)1 Source1 5 Drain26 Drain22 Gate1 175 C Maximum Junction Temperature7 Drain13 Source28 Drain14 Gate2D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25