Справочник MOSFET. IRFS242

 

IRFS242 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS242
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для IRFS242

 

 

IRFS242 Datasheet (PDF)

 8.1. Size:688K  1
 irfs240b.pdf

IRFS242 IRFS242

November 2001IRFS240B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to Fast

 8.2. Size:287K  1
 irfs240 irfs241.pdf

IRFS242 IRFS242

 8.3. Size:675K  1
 irfs244b.pdf

IRFS242 IRFS242

November 2001IRFS244B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.2A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to Fast

 8.4. Size:207K  1
 irfs244a.pdf

IRFS242 IRFS242

 8.5. Size:262K  1
 irfs240a.pdf

IRFS242 IRFS242

IRFS240AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 12.8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

 8.6. Size:225K  fairchild semi
 irfs244.pdf

IRFS242 IRFS242

IRFS244FEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10.2 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 250V Lower RDS(ON): 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Другие MOSFET... IRFS153 , IRFS230 , IRFS231 , IRFS232 , IRFS233 , IRFS240 , IRFS240A , IRFS241 , IRFB3306 , IRFS243 , IRFS244A , IRFS250 , IRFS250A , IRFS251 , IRFS252 , IRFS253 , IRFS254A .

 

 
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