Справочник MOSFET. SI5441DC

 

SI5441DC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI5441DC
   Маркировка: BA*
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.3 nC
   trⓘ - Время нарастания: 35 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: 1206-8

 Аналог (замена) для SI5441DC

 

 

SI5441DC Datasheet (PDF)

 ..1. Size:228K  vishay
 si5441dc.pdf

SI5441DC SI5441DC

Si5441DCVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated- 20 Compliant to RoHS Directive 2002/95/EC0.083 at VGS = - 2.5 V - 4.31206-8 ChipFET1

 8.1. Size:223K  vishay
 si5441bdc.pdf

SI5441DC SI5441DC

Si5441BDCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET0.052 at VGS = - 3.6 V - 5.7 11.5- 200.080 at VGS = - 2.5 V - 4.61206-8 ChipFET1DSD DD DMarking CodeD GGBK XXSLot Traceabil

 9.1. Size:200K  vishay
 si5443dc.pdf

SI5441DC SI5441DC

Si5443DCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs: 2.5 V Rated0.074 at VGS = - 3.6 V - 20 4.60.110 at VGS = - 2.5 V 3.81206 -8 ChipFET S1 D D D D D GMarking CodeD G BB XX Lot

 9.2. Size:226K  vishay
 si5445bdc.pdf

SI5441DC SI5441DC

Si5445BDCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.043 at VGS = - 2.5 V - 6.2 14- 80.060 at VGS = - 1.8 V - 5.31206-8 ChipFET1DSD DD DMarking CodeD GGBM XXSLot Traceability

 9.3. Size:203K  vishay
 si5449dc.pdf

SI5441DC SI5441DC

Si5449DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = - 4.5 V - 4.3 TrenchFET Power MOSFETs: 2.5 V Rated- 300.135 at VGS = - 2.5 V - 3.41206-8 ChipFETS1 D D D D D GMarking CodeD G BH XX Lot Traceability S and Date Code

 9.4. Size:247K  vishay
 si5440dc.pdf

SI5441DC SI5441DC

New ProductSi5440DCVishay Siliconix N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 10 V 630 9 nCAPPLICATIONS0.024 at VGS = 4.5 V 6 Load Switches- Notebook PC1206-8 ChipFET1DDD DD DD GGSSBottom ViewN-Channel

 9.5. Size:109K  vishay
 si5445dc.pdf

SI5441DC SI5441DC

Si5445DCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)0.035 @ VGS = --4.5 V7.1--8 0.047 @ VGS = --2.5 V 6.20.062 @ VGS = --1.8 V 5.7S1206-8 ChipFETt1DGD DD DMarking CodeD GBC XXSLot Traceabilityand Date CodePart # CodeDBottom ViewP-Channel MOSFETOrdering Information: Si5445DC-T1ABSOLUTE MAXIM

 9.6. Size:166K  vishay
 si5442du.pdf

SI5441DC SI5441DC

Si5442DUVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.0100 at VGS = 4.5 V 25- Small Footprint Area- Low On-Resistance0.0115 at VGS = 2.5 V 2520 16.6 nC- Thin 0.8 mm Profile0.0135 at VGS = 1.8 V 25 100% Rg Tested

 9.7. Size:203K  vishay
 si5447dc.pdf

SI5441DC SI5441DC

Si5447DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.076 at VGS = - 4.5 V - 4.8 TrenchFET Power MOSFETs: 1.8 V Rated0.110 at VGS = - 2.5 V - 20 - 4.00.160 at VGS = - 1.8 V - 3.31206-8 ChipFETS1DD DD DGMarking CodeD GBG XXSLot Traceab

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