SI5504BDC - Даташиты. Аналоги. Основные параметры

Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) ID (A) Qg (TYP.) Material categorization 0.065 at VGS = 10 V 4 a For definitions of compliance please see N-Channel 30 2 nC 0.100 at VGS = 4.5 V 4 a www.vishay.com/doc?99912 0.140 at VGS = -10 V -3.7 P-Channel -30 2.2 nC A

Si5504BDC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ) Definition 0.065 at VGS = 10 V 4a TrenchFET Power MOSFETs N-Channel 30 2 nC 0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC 0.140 at VGS = - 10 V - 3.7 P-Channel - 30 2.2 nC APPLICA

Si5504DC Vishay Siliconix Complementary 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.085 at VGS = 10 V 3.9 TrenchFET Power MOSFETs N-Channel 30 0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC 0.165 at VGS = - 10 V 2.8 P-Channel - 30 0.290 at VGS = - 4.5

SMD Type MOSFET Complementary power Trench MOSFET SI5504DC (KI5504DC) 1206-8 chipFET (Chip-8) Features N-Channel VDS=30V ID= 3.9A RDS(ON) 85m (VGS = 10V) RDS(ON) 143m (VGS = 4.5 V) P-Channel VDS=-30V ID=- 2.8A RDS(ON) 165m (VGS =-10V) RDS(ON) 290m (VGS =-4.5V) D1 S2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET A

Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.052 at VGS = 4.5 V 6.1a TrenchFET Power MOSFETs N-Channel 20 3.9 nC 0.084 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 4.8a 0.090 at VGS = - 4.5 V - 4.8a P-Channel - 20 3.8 nC