SI5853DDC - Даташиты. Аналоги. Основные параметры

Si5853DDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET- 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC0.188 at VGS = - 1.8 V

Si5853DDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET- 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC0.188 at VGS = - 1.8 V

Si5853DCVishay SiliconixP-Channel 1.8 V (G-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.110 at VGS = - 4.5 V - 3.6 LITTLE FOOT Plus0.160 at VGS = - 2.5 V - 20 - 3.0 Compliant to RoHS Directive 2002/95/EC0.240 at VGS = - 1.8 V - 2.4SCHOTTKY PRODUCT SUMMARY

Shen zhen TuoFeng Semiconductor Techonlogy co., LTDSI5853P-Channel Enhancement Mode MOSFET with Schottky DiodeFEATUREAPPLICATIONS MOSFET Battery Powered System -20V/-3.5A, RDS(ON) 110m @VGS = -4.5V Notebook Power Management -20V/-2.4A, RDS(ON) 160m@VGS = -2.5V Cell Phone SCHOTTKY VKA = 20V, VF=0.4V(Typ.)@ IF = 0.5A Full RoHS compliance

Si5853CDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.104 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET- 20 0.144 at VGS = - 2.5 V - 3.6 4.2 nC Compliant to RoHS Directive 2002/95/EC0.205 at VGS = - 1.8 V