SI5855CDC - Даташиты. Аналоги. Основные параметры

Si5855CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition LITTLE FOOT Plus Power MOSFET 0.144 at VGS = - 4.5 V - 3.7 Ultra Low VF Schottky 0.180 at VGS = - 2.5 V - 3.3 4.1 nC - 20 Compliant to RoHS Directive 2002/95/EC

Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.110 at VGS = - 4.5 V - 3.6 TrenchFET Power MOSFETs 0.160 at VGS = - 2.5 V - 20 - 3.0 Ultra Low Vf Schottky 0.240 at VGS = - 1.8 V - 2.4 Si5853DC Pin Compatible C

Si5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.058 at VGS = - 4.5 V 6 LITTLE FOOT Plus Power MOSFET - 20 5.5 nC 0.100 at VGS = - 2.5 V 6 New Thermally Enhanced PowerPAK ChipFET Package SCHOTTKY PRODUCT S

Si5853DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.110 at VGS = - 4.5 V - 3.6 LITTLE FOOT Plus 0.160 at VGS = - 2.5 V - 20 - 3.0 Compliant to RoHS Directive 2002/95/EC 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY

Si5858DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.039 at VGS = 4.5 V 6 LITTLE FOOT Plus Power MOSFET 0.045 at VGS = 2.5 V 20 6 6 nC New Thermally Enhanced PowerPAK 0.055 at VGS = 1.8 V ChipFET Package 6 - Sm

Si5856DC Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs 0.045 at VGS = 2.5 V 20 5.6 Ultra Low RDS(on) 0.052 at VGS = 1.8 V 5.2 Ultra Low VF Schottky Si5853DC Pin Compatib

Shen zhen TuoFeng Semiconductor Techonlogy co., LTD SI5853 P-Channel Enhancement Mode MOSFET with Schottky Diode FEATURE APPLICATIONS MOSFET Battery Powered System -20V/-3.5A, RDS(ON) 110m @VGS = -4.5V Notebook Power Management -20V/-2.4A, RDS(ON) 160m @VGS = -2.5V Cell Phone SCHOTTKY VKA = 20V, VF=0.4V(Typ.)@ IF = 0.5A Full RoHS compliance

Si5853CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.104 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.144 at VGS = - 2.5 V - 3.6 4.2 nC Compliant to RoHS Directive 2002/95/EC 0.205 at VGS = - 1.8 V

Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC 0.188 at VGS = - 1.8 V

Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC 0.188 at VGS = - 1.8 V