SI5906DU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI5906DU
Маркировка: CD*
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 72 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm
Тип корпуса: POWERPAK
SI5906DU Datasheet (PDF)
si5906du.pdf
New ProductSi5906DUVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V TrenchFET Power MOSFET630 8 nC New Thermally Enhanced PowerPAK0.040 at VGS = 4.5 V 6ChipFET Package- Small Footprint Area- Low On-Resistance-
si5902dc.pdf
Si5902DCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.930 TrenchFET Power MOSFETs0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D21S1D1 G1D1 S2G1 G2D2 G2Marking CodeD2
si5904dc.pdf
Si5904DCVishay SiliconixDual N-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.075 at VGS = 4.5 V 4.220 TrenchFET Power MOSFET: 2.5 V Rated0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFET1D1 D2S1D1 G1D1 S2D2 G2Marking Code
si5905bd.pdf
Si5905BDCVishay SiliconixDual P-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 4a TrenchFET Power MOSFETs- 8 0.117 at VGS = - 2.5 V - 4a 4 nC Compliant to RoHS Directive 2002/95/EC0.170 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch f
si5902bdc.pdf
Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET
si5903dc.pdf
Si5903DCVishay SiliconixDual P-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.155 at VGS = - 4.5 V 2.9 TrenchFET Power MOSFETs0.180 at VGS = - 3.6 V - 20 2.7 Compliant to RoHS Directive 2002/95/EC0.260 at VGS = - 2.5 V 2.21206-8 ChipFETS1 S21S1D1 G1
si5902bd si5902bdc.pdf
Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET
si5908dc.pdf
Si5908DCVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs Ultra Low RDS(on) and Excellent Power0.045 at VGS = 2.5 V 20 5.6Handling in Compact Footprint0.052 at VGS = 1.8 V 5.2 Compliant to RoHS Direct
si5504bdc si5904bd.pdf
Si5504BDCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFETsN-Channel 30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC0.140 at VGS = - 10 V - 3.7P-Channel - 30 2.2 nC APPLICA
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