Справочник MOSFET. IRFS252

 

IRFS252 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS252
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для IRFS252

 

 

IRFS252 Datasheet (PDF)

 8.1. Size:207K  1
 irfs254a.pdf

IRFS252 IRFS252

 8.2. Size:256K  1
 irfs250a.pdf

IRFS252 IRFS252

IRFS250AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 21.3 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymb

 8.3. Size:285K  1
 irfs250 irfs251.pdf

IRFS252 IRFS252

 8.4. Size:648K  1
 irfs254b.pdf

IRFS252 IRFS252

November 2001IRFS254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

 8.5. Size:655K  fairchild semi
 irfs250b.pdf

IRFS252 IRFS252

November 2001IRFS250B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has been especially tailored to Fas

 8.6. Size:234K  fairchild semi
 irfs254.pdf

IRFS252 IRFS252

IRFS254FEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 16 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 250V Low RDS(ON): 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top