SI7136DP - Даташиты. Аналоги. Основные параметры

Si7136DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High 20 24.5 Density TrenchFET Gen II Power 0.0045 at VGS = 4.5 V 30 MOSFET Technology PowerPAK SO-8 Qg Optimized 100 % Rg Tested

New Product Si7137DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.00195 at VGS = - 10 V - 60d TrenchFET Gen III P-Channel Power MOSFET - 20 0.0025 at VGS = - 4.5 V - 60d 183 nC 100 % Rg Tested 0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested

Si7138DP Vishay Siliconix N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package 60 55 0.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/

New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0055 at VGS = - 10 V - 40d TrenchFET Power MOSFET - 30 49.5 nC 100% Rg Tested 0.0090 at VGS = - 4.5 V - 40d 100% UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/

New Product Si7135DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0039 at VGS = - 10 V - 60 COMPLIANT - 30 78 nC 100 % Rg Tested 0.0062 at VGS = - 4.5 V - 60 APPLICATIONS PowerPAK SO-8 Notebook - Load Switch S S 6.15 mm 5.15 mm 1 S 2