SI7655ADN - параметры транзистора MOSFET, его аналоги, datasheet

SI7655ADN Datasheet (PDF)

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Si7655ADNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0036 at VGS = - 10 V - 40eProfile- 20 0.0048 at VGS = - 4.5 V - 40e 72 nC 100 % Rg and UIS Tested0.0090 at VGS = - 2.5 V - 40e Materia

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New ProductSi7655DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0036 at VGS = - 10 V - 40eProfile- 20 0.0048 at VGS = - 4.5 V - 40e 72 nC 100 % Rg and UIS Tested0.0085 at VGS = - 2.5 V - 40e

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Si7652DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 15 TrenchFET Power MOSFETs300.030 at VGS = 4.5 V 12 High-Efficient PWM Optimized 100 % Rg and UIS TestedPowerPAK SO-8DS6.15 mm 5.15 mm1S2S3G

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New ProductSi7658ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0022 at VGS = 10 V 60gCOMPLIANT 100 % Rg Tested30 34 nC0.0028 at VGS = 4.5 V 60g 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Low-Side Switch for DC/D