SI7852ADP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7852ADP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 30 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: POWERPAK-SO-8
SI7852ADP Datasheet (PDF)
si7852adp.pdf
Si7852ADPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.017 at VGS = 10 V 30 TrenchFET Power MOSFET80 30.50.021 at VGS = 8 V 30 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONSS6.15 mm 5.15 mmD1 Primary Side Sw
si7852ad.pdf
Si7852ADPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.017 at VGS = 10 V 30 TrenchFET Power MOSFET80 30.50.021 at VGS = 8 V 30 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONSS6.15 mm 5.15 mmD1 Primary Side Sw
si7852dp.pdf
Si7852DPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0165 at VGS = 10 V TrenchFET Power MOSFETS12.580 New Low Thermal Resistance PowerPAK0.022 at VGS = 6 V 10.9Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested
si7850dp.pdf
Si7850DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10.3 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 8.7 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching
si7858adp.pdf
Si7858ADPVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0026 at VGS = 4.5 V 29 New Low Thermal Resistance PowerPAK COMPLIANT12 540.0037 at VGS = 2.5 V 23Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 APPLICATIONS
si7858bdp.pdf
New ProductSi7858BDPVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 4.5 V 40 TrenchFET Power MOSFET12 0.0030 at VGS = 2.5 V 40 56 nC 100 % Rg Tested0.0037 at VGS = 1.8 V 40 100 % UIS Tested Compliant to RoHS Directive 200
si7856adp.pdf
Si7856ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.)Available TrenchFET Power MOSFET0.0037 at VGS = 10 V 25RoHS* Optimized for Low Side Synchronous 30 39COMPLIANT0.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package with
si7850dp.pdf
SI7850DPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYAvailableVDS (V) 60 TrenchFET Power MOSFETRDS(on) max. () at VGS = 10 V 0.024 100 % Rg TestedRDS(on) max. () at VGS = 4.5 V 0.028 100 % UIS TestedQg typ. (nC) 5.2ID (A) 15a, gAPPLICATIONSConfiguration Single Battery Switch
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918