IRFS450AFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.6 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

isc N-Channel MOSFET Transistor IRFS450AFEATURESAvalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose appl

November 2001IRFS450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast