MDF6N65BTH - описание и поиск аналогов

MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45 General Description Features The MDF6N65B use advanced Magnachip s VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications

MDF6N60B N-Channel MOSFET 600V, 6A, 1.45 General Description Features The MDF6N60B uses advanced MagnaChip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Designer's Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola s High Cell Density TMOS 20 VOLTS process. Th

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D Designer's Data Sheet MMDF6N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 30 VOLTS MOSFETs which utilize Motorola s High Cell Density TMOS RDS(on) = 35 mW proces

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Designer's Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola s High Cell Density TMOS 20 VOLTS process. Th

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D Designer's Data Sheet MMDF6N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 30 VOLTS MOSFETs which utilize Motorola s High Cell Density TMOS RDS(on) = 35 mW proces