MDF6N65BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDF6N65BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 39 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19.4 nC
Время нарастания (tr): 30 ns
Выходная емкость (Cd): 85 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.45 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MDF6N65BTH
MDF6N65BTH Datasheet (PDF)
mdf6n65bth.pdf
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MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45General Description Features The MDF6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications
mdf6n60bth.pdf
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MDF6N60B N-Channel MOSFET 600V, 6A, 1.45General Description Features The MDF6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch
mdf6n60th mdp6n60th.pdf
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MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM
mmdf6n02hdrev1.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th
mmdf6n03hdrev2.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N03HD/DDesigner's Data SheetMMDF6N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 35 mWproces
mmdf6n02hd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th
mmdf6n03hd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N03HD/DDesigner's Data SheetMMDF6N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 35 mWproces
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