MDF7N60BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDF7N60BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 42 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 20.1 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.15 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MDF7N60BTH
MDF7N60BTH Datasheet (PDF)
mdf7n60bth mdp7n60bth.pdf
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MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices
mdf7n65bth.pdf
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MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic
mmdf7n02zrev0.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2
mmdf7n02z.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2
mdf7n50bth mdp7n50bth.pdf
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MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an
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