MDP12N50BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDP12N50BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 165 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19.3 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 126 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO-220
Аналог (замена) для MDP12N50BTH
MDP12N50BTH Datasheet (PDF)
mdf12n50bth mdp12n50bth.pdf
MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65General Description Features The MDP/F12N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc
mdp12n50bth.pdf
isc N-Channel MOSFET Transistor MDP12N50BTHFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
mdp12n50th.pdf
MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65 General Description Features The MDP12N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 11.5A @ V = 10V D GSswitching performance and excellent quality. R 0.65 @ V = 10V DS(ON) GSMDP12N50 is suitable device for SMPS, high Speed Applications switching and ge
mdf12n50fth mdp12n50fth.pdf
MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic
mdp12n50th.pdf
isc N-Channel MOSFET Transistor MDP12N50THFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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