Справочник MOSFET. MDP9N50BTH

 

MDP9N50BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDP9N50BTH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15.7 nC
   trⓘ - Время нарастания: 27.3 ns
   Cossⓘ - Выходная емкость: 101 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для MDP9N50BTH

 

 

MDP9N50BTH Datasheet (PDF)

 ..1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDP9N50BTH MDP9N50BTH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 ..2. Size:288K  inchange semiconductor
 mdp9n50bth.pdf

MDP9N50BTH MDP9N50BTH

isc N-Channel MOSFET Transistor MDP9N50BTHFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:770K  magnachip
 mdp9n50th.pdf

MDP9N50BTH MDP9N50BTH

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

 7.2. Size:288K  inchange semiconductor
 mdp9n50th.pdf

MDP9N50BTH MDP9N50BTH

isc N-Channel MOSFET Transistor MDP9N50THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:729K  magnachip
 mdp9n60th.pdf

MDP9N50BTH MDP9N50BTH

MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an

 9.2. Size:289K  inchange semiconductor
 mdp9n60th.pdf

MDP9N50BTH MDP9N50BTH

isc N-Channel MOSFET Transistor MDP9N60THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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