MDP9N50BTH - описание и поиск аналогов

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

isc N-Channel MOSFET Transistor MDP9N50BTH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

isc N-Channel MOSFET Transistor MDP9N50TH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

MDP9N60 N-Channel MOSFET 600V, 9A, 0.75 General Description Features The MDP9N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V DS switching performance and excellent quality. I =9.0A @ V = 10V D GS RDS(ON) 0.75 @ VGS = 10V MDP9N60 is suitable device for SMPS, high Speed switching Applications an

Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ

isc N-Channel MOSFET Transistor MDP9N60TH FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno